Semiconductor device

ABSTRACT

A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application Ser. No.15/018,477, filed Feb. 8, 2016, which in turn is a continuation ofapplication Ser. No. 14/534,352, filed Nov. 6, 2014, now U.S. Pat. No.9,431,415, the entire contents of which is hereby incorporated byreference.

Korean Patent Application No. 10-2013-0135837, filed on Nov. 8, 2013, inthe Korean Intellectual Property Office, and entitled: “SemiconductorDevice,” is incorporated by reference herein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a semiconductor device, and more particularly, toa semiconductor device having a NAND cell array.

2. Description of the Related Art

As info-communication devices have had multiple functions recently, thecapacity and the degree of integration of a memory device areincreasing. A reduction in a memory cell size for increasing the degreeof integration may complicate operation of circuits and/or ofinterconnect structures included in a memory device for operation andelectrical connection of the memory device. Accordingly, there is anecessity for a memory device that has excellent electricalcharacteristics together with an improved degree of integration.

SUMMARY

Embodiments provide a semiconductor device having excellent electricalcharacteristics and a high degree of integration.

According to an aspect of embodiments, there is provided a semiconductordevice including a peripheral circuit gate structure on a substrate, afirst semiconductor layer on the peripheral circuit gate structure, amemory cell array region on the first semiconductor layer, a verticalcontact through the memory cell array region and the first semiconductorlayer, the vertical contact being electrically connected to theperipheral circuit gate structure, and a peripheral circuitinterconnection structure including an upper interconnection layer onthe memory cell array region, the peripheral circuit interconnectionstructure being electrically connected to the vertical contact.

In exemplary embodiments, the peripheral circuit gate structure mayoverlap the memory cell array region in a vertical direction.

In exemplary embodiments, the peripheral circuit interconnectionstructure may further include a dummy bit line formed at the same levelas a bit line in the memory cell array region, and the vertical contactand the upper interconnection layer may be electrically connected toeach other through the dummy bit line.

In exemplary embodiments, the peripheral circuit interconnectionstructure may further include a lower interconnection layer connected tothe peripheral circuit gate structure under the memory cell arrayregion, and the upper interconnection layer may include a materialhaving a lower sheet resistance than a material of the lowerinterconnection layer.

In exemplary embodiments, the memory cell array region may include achannel layer extending in a vertical direction on the firstsemiconductor layer, and a ground selection line, word lines, and astring selection line spaced apart in the vertical direction along asidewall of the channel layer.

In exemplary embodiments, the first semiconductor layer may include atleast one common source region, and the at least one common sourceregion may be electrically connected to the substrate through a firstburied contact.

In exemplary embodiments, the at least one common source region mayinclude a first impurity, and a concentration of the first impurity inthe at least one common source region may increase in a verticaldirection toward the substrate.

In exemplary embodiments, the first buried contact may extend in adirection in which the at least one common source region extends.

In exemplary embodiments, the first semiconductor layer may include atleast one p+ well, and the at least one p+ well may be electricallyconnected to the substrate through a second buried contact.

In exemplary embodiments, the semiconductor device may further include abarrier metal layer formed between the first semiconductor layer and theperipheral circuit gate structure.

In exemplary embodiments, the memory cell array region may include aplurality of word lines on the first semiconductor layer and spacedapart from the first semiconductor layer, and a ground selection lineand a string selection line which are formed on both sides of theplurality of word lines, respectively.

According to another aspect of embodiments, there is provided asemiconductor device including a peripheral circuit region on asubstrate, a polysilicon layer on the peripheral circuit region, amemory cell array region on the polysilicon layer and overlapping theperipheral circuit region, the peripheral circuit region being under thememory cell array region, an upper interconnection layer on the memorycell array region, and a vertical contact through the memory cell arrayregion and the polysilicon layer, the vertical contact connecting theupper interconnection layer to the peripheral circuit region.

In exemplary embodiments, the peripheral circuit region may include atleast one peripheral circuit configured to process input or output data.

In exemplary embodiments, the at least one peripheral circuit mayinclude a page buffer, a latch circuit, a cache circuit, a columndecoder, a sense amplifier, or a data in/out circuit.

In exemplary embodiments, the upper interconnection layer may includecopper, aluminum, silver, or gold.

According to yet another aspect of embodiments, there is provided asemiconductor device including a memory cell array region on asubstrate, a peripheral circuit gate structure between the memory cellarray region and the substrate, the memory cell array region and theperipheral circuit gate structure overlapping each other, a firstsemiconductor layer between the peripheral circuit gate structure andthe memory cell array region, a vertical contact through the memory cellarray region and through the first semiconductor layer, the verticalcontact being electrically connected to the peripheral circuit gatestructure, and a peripheral circuit interconnection structure on thememory cell array region, the peripheral circuit interconnectionstructure being electrically connected to the vertical contact.

The memory cell array region may be spaced apart from the peripheralcircuit gate structure along a vertical direction, the memory cell arrayregion completely overlapping the peripheral circuit gate structure.

The vertical contact may extend along the vertical direction through thememory cell array region and through the first semiconductor layer, thevertical contact electrically connecting the peripheral circuitinterconnection structure and the peripheral circuit gate structurethrough the memory cell array region.

The first semiconductor layer may include at least one common sourceregion electrically connected to the substrate through a first buriedcontact, the first buried contact overlapping the memory cell arrayregion.

The first semiconductor layer may be spaced apart from the substratealong a vertical direction, the first buried contact extending along thevertical direction from the first semiconductor layer toward thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1A illustrates a layout diagram of a semiconductor device accordingto exemplary embodiments;

FIGS. 1B and 1C illustrate cross-sectional views along lines 1B-1B′ and1C-1C′ of FIG. 1A, respectively;

FIG. 2A illustrates a layout diagram of a semiconductor device accordingto exemplary embodiments;

FIG. 2B illustrates a cross-sectional view taken along line 2B-2B′ ofFIG. 2A;

FIG. 3A illustrates a layout diagram of a semiconductor device accordingto exemplary embodiments;

FIG. 3B illustrates a cross-sectional view taken along line 3B-3B′ ofFIG. 3A; and

FIG. 4A to FIG. 13 illustrate cross-sectional views of stages in amethod of fabricating a semiconductor device according to exemplaryembodiments.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. It will also be understood thatwhen a layer, i.e., element, is referred to as being “on” another layeror substrate, it can be directly on the other layer or substrate, orintervening layers may also be present. In addition, it will also beunderstood that when a layer is referred to as being “between” twolayers, it can be the only layer between the two layers, or one or moreintervening layers may also be present. Like reference numerals refer tolike elements throughout.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of,” when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list.

FIG. 1A illustrates a layout diagram of a semiconductor device 1000according to exemplary embodiments, and FIGS. 1B and 1C illustratecross-sectional views of the semiconductor device 1000. FIG. 1Billustrates a cross-sectional view taken along line 1B-1B′ of FIG. 1A,and FIG. 1C illustrates a cross-sectional view taken along line 1C-1C′of FIG. 1A.

Referring to FIGS. 1A to 1C, a substrate 110 of the semiconductor device1000 may include a memory cell array region I, a first peripheralcircuit region II, a second peripheral circuit region III, and a bondingpad region IV.

In the memory cell array region I, vertical memory cells may bedisposed. In the first and second peripheral, i.e., driving, circuitregions II and III, peripheral, i.e., driving, circuits for driving thevertical memory cells may be disposed.

The first peripheral circuit region II may be disposed under the memorycell array region I, and may overlap the memory cell array region I in avertical direction. Peripheral circuits disposed in the first peripheralcircuit region II may process data input to/output from the memory cellarray region I at high speed. For example, the peripheral circuits maybe page buffers, latch circuits, cache circuits, column decoders, senseamplifiers, data in/out circuits, or so on.

For example, the second peripheral circuit region III may be disposed ata first side of the memory cell array region I not to overlap the memorycell array region I and/or the first peripheral circuit region II.Peripheral circuits formed in the second peripheral circuit region IIImay be, e.g., row decoders. However, while FIG. 1A illustrates that theperipheral circuits are disposed in the second peripheral circuit regionIII not to overlap the memory cell array region I, the second peripheralcircuit region III is not limited to the layout in FIG. 1A. In anotherexample, the peripheral circuits disposed in the second peripheralcircuit region III may be formed under the memory cell array region Iaccording to a design.

The bonding pad region IV may be formed at a second side of the memorycell array region I. In the bonding pad region IV, interconnectionsconnected to word lines of the respective vertical memory cells in thememory cell array region I may be formed.

In the first peripheral circuit region II of the substrate 110, anactive region may be defined by a device isolation layer 112. In theactive region, a peripheral circuit p-well 114 p and a peripheralcircuit n-well 114 n may be formed. An n-channel metal oxidesemiconductor (NMOS) transistor may be formed on the peripheral circuitp-well 114 p, and a p-channel metal oxide semiconductor (PMOS)transistor may be formed on the peripheral circuit n-well 114 n.

A peripheral circuit gate structure 120 may be formed on the activeregion of the substrate 110. The peripheral circuit gate structure 120may include a peripheral circuit gate insulating layer 122, a peripheralcircuit gate electrode 124, a peripheral circuit spacer 126, andsource/drain regions 128.

A dummy gate structure 130 may be formed in a field region of thesubstrate 110, i.e., on the device isolation layer 112. The dummy gatestructure 130 may be disposed to overlap the memory cell array region Ior disposed along an outline of the memory cell array region I. Thedummy gate structure 130 may include a dummy gate insulating layer 132,a dummy gate electrode 134, and a dummy spacer 136.

A first etch stop layer 140 may cover the peripheral circuit gatestructure 120 and the dummy gate structure 130 on the substrate 110. Thefirst etch stop layer 140 includes an insulating material, e.g., siliconoxide or silicon oxynitride, and may be formed with a predeterminedthickness to, e.g., conformally, cover the peripheral circuit gatestructure 120 and the dummy gate structure 130.

On the first etch stop layer 140, first to third interlayer insulatinglayers 142, 144, and 146 may be stacked in sequence. The first to thirdinterlayer insulating layers 142, 144, and 146 may include, e.g.,silicon oxide, silicon oxynitride, and so on.

A lower interconnection structure 150 is formed in the first to thirdinterlayer insulating layers 142, 144, and 146, and may be connected tothe peripheral circuit gate structure 120. The lower interconnectionstructure 150 may include a first interconnection contact 152, a firstlower interconnection layer 154, a second interconnection contact 156,and a second lower interconnection layer 158. The first lowerinterconnection layer 154 may be formed on the first interlayerinsulating layer 142, and is electrically connected to the peripheralcircuit gate structure 120 through the first interconnection contact152. The second lower interconnection layer 158 may be formed on thesecond interlayer insulating layer 144, and is electrically connected tothe first lower interconnection layer 154 through the secondinterconnection contact 156. The first and second lower interconnectionlayers 154 and 158 may include a metal or a metal silicide materialhaving a high melting point. In exemplary embodiments, the first andsecond lower interconnection layers 154 and 158 may include a metal,e.g., tungsten (W), molybdenum (Mo), titanium (Ti), cobalt (Co),tantalum (Ta), and/or nickel (Ni), or a conductive material, e.g.,tungsten silicide, titanium silicide, cobalt silicide, tantalumsilicide, and/or nickel silicide.

FIGS. 1B and 1C illustrate the lower interconnection structure 150having a structure in which the two lower interconnection layers 154 and158 are connected by the two interconnection contacts 152 and 156.However, embodiments are not limited thereto. For example, according tothe layout of the first peripheral circuit region II and the type andarrangement of the peripheral circuit gate structure, the lowerinterconnection structure 150 may have a structure with three or morelower interconnection layers connected by three or more interconnectioncontacts.

A dummy interconnection structure 160 may be connected to the dummy gatestructure 130 in the first to third interlayer insulating layers 142,144, and 146. The dummy interconnection structure 160 may include afirst dummy interconnection contact 162, a first dummy interconnectionlayer 164, a second dummy interconnection contact 166, and a secondinterconnection layer 168.

A first semiconductor layer 170 may be formed on the third interlayerinsulating layer 146. The first semiconductor layer 170 may be formed tooverlap the memory cell array region I and the bonding pad region IV,and may not be formed at least in a part of the second peripheralcircuit region III. The first semiconductor layer 170 may serve as asubstrate on which the vertical memory cells will be formed. Inexemplary embodiments, the first semiconductor layer 170 may include,e.g., polysilicon doped with an impurity. For example, the firstsemiconductor layer 170 may include polysilicon doped with a p-typeimpurity. Also, the first semiconductor layer 170 may be formed with aheight, e.g., thickness along the z-axis, of about 20 nm to about 500nm, but the height of the first semiconductor layer 170 is not limitedthereto.

In a portion of the first semiconductor layer 170 of the memory cellarray region I, a common source region 172 extending in a firstdirection (an x direction in FIG. 1C), which is parallel to the mainsurface of the substrate 110, may be formed. The common source region172 may be an impurity region doped with an n-type impurity at a highconcentration, and a p-well (not shown) in the common source region 172and the first semiconductor layer 170 may constitute a p-n junctiondiode. The common source region 172 may serve as a source region thatsupplies current to the vertical memory cells. The common source region172 may have a concentration profile in which the doping concentrationof the n-type impurity increases in a vertically downward direction fromthe upper surface of the first semiconductor layer 170.

In a portion of the first semiconductor layer 170 outside the memorycell array region I, e.g., in the pad region IV or in a peripheralportion illustrated on the right side of the cell array region I in FIG.1A, a p+ well 174 may be formed. In the edge portion of the firstsemiconductor layer 170, a plurality of p+ wells 174 may be arranged atintervals in a second direction (a y direction in FIG. 1A), which isparallel to the main surface of the substrate 110. The p+ wells 174 maybe impurity regions doped with a p-type impurity at a highconcentration. The p+ wells 174 may supply current into the p-wellformed in the first semiconductor layer 170 so that a memory cell arraymay have high response speed. The p+ wells 174 may have a concentrationprofile in which the doping concentration of the p-type impurityincreases in a vertically downward direction from the upper surface ofthe first semiconductor layer 170.

Optionally, a barrier metal layer 178 may be interposed between thefirst semiconductor layer 170 and the third interlayer insulating layer146. In exemplary embodiments, the barrier metal layer 178 may include,e.g., Ti, Ta, titanium nitride, tantalum nitride, or so on. The barriermetal layer 178 may form an ohmic contact with the first semiconductorlayer 170, thereby reducing resistance between first and second buriedcontacts 182 and 184 formed under the barrier metal layer 178 and thefirst semiconductor layer 170. However, when the barrier metal layer 178is unnecessary according to the kind of a metal material used as thefirst and second buried contacts 182 and 184 and the dopingconcentration of the first semiconductor layer 170, the barrier metallayer 178 may not be formed.

The first buried contact 182 may be formed under the common sourceregion 172. That is, the first buried contact 182 may be formed betweenthe common source region 172 and the dummy interconnection structure160, e.g., between the barrier metal layer 178 and the dummyinterconnection structure 160 along the z-axis (FIG. 1C). For example,as illustrated in FIG. 1A, a plurality first buried contacts 182 may bespaced apart from each other along the x-axis, e.g., along the commonsource region 172. Accordingly, the common source region 172 may beelectrically connected to the dummy gate structure 130 through the firstburied contact 182 and the dummy interconnection structure 160. Thefirst buried contact 182 may include a metal, e.g., W, Mo, Ti, Co, Ta,and/or Ni, or a conductive material, e.g., tungsten silicide, titaniumsilicide, cobalt silicide, tantalum silicide, and/or nickel silicide.

Since the first buried contact 182 electrically connects the commonsource region 172 to the dummy gate structure 130 on the substrate 110,malfunction of vertical memory devices may be prevented or substantiallyminimized. That is, when an interconnection line connected to the commonsource region 172 is on an upper portion of a memory cell array, i.e.,rather than being embedded under the common source region 172 as thefirst buried contact 182, an area for other interconnection lines on theupper portion of the memory cell array may be reduced due to a limitedarea of the upper portion of the memory cell array. Therefore, when thecommon source region 172 is connected to the dummy gate structure 130 onthe substrate 110 through the first buried contact 182 according toexample embodiments, i.e., through a contact embedded within a pluralityof stacked insulation layers underneath the common source region 172,the first buried contacts 182 may be formed under the common sourceregion 172 without limiting or minimizing an area employed for otherinterconnection lines in the upper portion of the memory cell array.Therefore, malfunction of the semiconductor device 1000 may beeffectively prevented or substantially minimized.

The second buried contact 184 may be formed under the p+ well 174. Thatis, the second buried contact 184 may be formed between the p+ well 174and the dummy interconnection structure 160, e.g., between the barriermetal layer 178 and the dummy interconnection structure 160 along thez-axis (FIG. 1B). For example, as illustrated in FIG. 1A, a pluralitysecond buried contacts 184 may be spaced apart from each other along they-axis, e.g., to overlap corresponding p+ wells 174 along the y-axis.Accordingly, the p+ well 174 may be electrically connected to the dummygate structure 130 through the second buried contact 184 and the dummyinterconnection structure 160 along the z-axis. Since the p+ well 174 iselectrically connected to the dummy gate structure 130 on the substrate110, malfunction of the vertical memory devices may be prevented orsubstantially minimized.

On the first semiconductor layer 170, a first insulating layer 191, aground selection line 192, a second insulating layer 193, a first wordline 194, a third insulating layer 195, a second word line 196, a fourthinsulating layer 197, a string selection line 198, and a fifthinsulating layer 199 may be formed in sequence.

In exemplary embodiments, the ground selection line 192, the word lines194 and 196, and the string selection line 198 may include, e.g., ametal, e.g., W, Ni, Co, and/or Ta, a polysilicon doped with an impurity,a metal silicide, e.g., tungsten silicide, titanium silicide, cobaltsilicide, tantalum silicide, and/or nickel silicide, or a combinationthereof. The first to fifth insulating layers 191, 193, 195, 197, and199 may include, e.g., silicon oxide, silicon nitride, siliconoxynitride, and so on.

FIGS. 1A to 1C illustrate that only two word lines 194 and 196 areformed, but embodiments are not limited thereto. For example, astructure may be formed in which a plurality, e.g., 4, 8, 16, 32, or 64,of word lines are stacked in a vertical direction between the groundselection line 192 and the string selection line 198, and an insulatinglayer is interposed between every two adjacent word lines. The number ofstacked word lines is not limited to the above numbers. Also, in thestructure, two or more ground selection lines 192 and two or more stringselection lines 198 may be stacked in a vertical direction.

Although not shown in the drawings, at least one dummy word line (notshown) may be formed between the ground selection line 192 and the firstword line 194, and/or between the second word line 196 and the stringselection line 198. The dummy word line may prevent inter-cellinterference that may occur between the lowermost word line 194 and theground selection line 192, and/or between the uppermost word line 196and the string selection line 198, when a distance between memory cells(i.e., the distance between the lines) is reduced in a verticaldirection.

Channel layers 200 may penetrate through the ground selection line 192,the word lines 194 and 196, the string selection line 198, and the firstto fifth insulating layers 191, 193, 195, 197, and 199, and may extendin a third direction (a z direction in FIG. 1B), which is perpendicularto the upper surface of the substrate 110. Bottom surfaces of thechannel layers 200 may, e.g., directly, contact an upper surface of thefirst semiconductor layer 170. The channel layers 200 may be arranged atpredetermined intervals in the first and second directions, i.e., alongthe x and y axes.

In exemplary embodiments, the channel layers 200 may include, e.g.,polysilicon doped with an impurity or undoped polysilicon. The channellayers 200 may be formed in the shape of vertically extending cups,e.g., cylinders with blocked bottoms, and interiors of the channellayers 200 may be filled with buried insulating layers 202. For example,upper surfaces of the buried insulating layers 202 may be placed at asame level as upper surfaces of the channel layers 200. In anotherexample, the channel layers 200 may be formed in a pillar shape, so theburied insulating layers 202 may not be formed.

A gate insulating layer 204 may be interposed between each of thechannel layers 200 and each of the ground selection line 192, the wordlines 194 and 196, and the string selection line 198. Each gateinsulating layer 204 may include a tunnel insulating film (see 204 a inFIG. 8), a charge storage film (see 204 b in FIG. 8), and a blockinginsulating film (see 204 c in FIG. 8) that are stacked in sequence.Optionally, a barrier metal layer (not shown) may be further formedbetween each gate insulating layer 204 and each of the ground selectionline 192, the word lines 194 and 196, and the string selection line 198.The tunnel insulating film 204 a may include, e.g., silicon oxide,hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, and soon. The charge storage film 204 b may be a region in which electronstunneling from the channel layer 200 are stored, and may include, e.g.,silicon nitride, boron nitride, silicon-boron nitride, and/orpolysilicon doped with an impurity. The blocking insulating film 204 cmay include a singular film or stacked films formed of, e.g., siliconoxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide,tantalum oxide, and so on. However, the material of the blockinginsulating film 204 c is not limited thereto, e.g., may includedielectric materials having high dielectric constants.

The ground selection line 192 and a portion of each channel layer 200and a portion of each gate insulating layer 204 adjacent to the groundselection line 192 may constitute a ground selection transistortogether. Also, the word lines 194 and 196 and a portion of each channellayer 200 and a portion of each gate insulating layer 204 adjacent tothe word lines 194 and 196 may constitute a memory cell transistortogether. Each string selection line 198 and a portion of each channellayer 200 and a portion of each gate insulating layer 204 adjacent tothe string selection line 198 may constitute a string selectiontransistor together.

Drain regions 206 may be formed on the channel layers 200 and the buriedinsulating layers 202. In exemplary embodiments, the drain regions 206may include polysilicon doped with an impurity.

A second etch stop layer 210 may be formed on the fifth insulating layer199 and the sidewalls of the drain regions 206. An upper surface of thesecond etch stop layer 210 may be formed at a same level as uppersurfaces of the drain regions 206. The second etch stop layer 210 mayinclude an insulating material, e.g., silicon nitride and silicon oxide.

A fourth interlayer insulating layer 212 may be formed on the secondetch stop layer 210. The fourth interlayer insulating layer 212 maycover exposed side surfaces of the string selection line 198, the wordlines 194 and 196, and the ground selection line 192.

Bit line contacts 214 may be formed to penetrate the fourth interlayerinsulating layer 212 and may be connected to the drain regions 206. Thefourth interlayer insulating layer 212 may have an upper surface formedat a same level as an upper surface of the bit line contacts 214. Bitlines 216 may be formed on the bit line contacts 214. The bit lines 216may extend in the second direction, and the plurality of channel layers200 arranged in the second direction may be electrically connected tothe bit lines 216. A fifth interlayer insulating layer 218 that coversthe bit lines 216 may be formed on the fourth interlayer insulatinglayer 212.

As illustrated in FIGS. 1A and 1C, a common source line 222 extending inthe first direction, i.e., along the x-axis, may be formed on, e.g.,directly on, the common source region 172. For example, as illustratedin FIG. 1C, the common source line 222 may penetrate through the groundselection line 192, the word lines 194 and 196, and the string selectionline 198 to contact the common source region 172. Common source linespacers 224 including an insulating material may be formed on sidewallsof the common source line 222, thereby preventing electrical connectionbetween the common source line 222 and each of the ground selection line192, the word lines 194 and 196, and the string selection line 198. Anupper surface of the common source line 222 may be formed at a samelevel as the upper surface of the second etch stop layer 210.

A peripheral circuit interconnection structure 230 may include avertical contact 232, a dummy bit line 234, an upper interconnectionlayer 236, a third interconnection contact 238, and a dummy bit linecontact 242. The peripheral circuit interconnection structure 230 may bedisposed in the memory cell array region I, and may penetrate the groundselection line 192, the word lines 194 and 196, the string selectionline 198, and the first semiconductor layer 170 to be electricallyconnected to the peripheral circuit gate structure 120.

The vertical contact 232 may penetrate the fourth interlayer insulatinglayer 212, the second etch stop layer 210, the string selection line198, the word lines 194 and 196, the ground selection line 192, thefirst semiconductor layer 170, and the barrier metal layer 178 to beelectrically connected to the lower interconnection structure 150. Thebottom surface of the vertical contact 232 may contact the upper surfaceof the second lower interconnection layer 158. In exemplary embodiments,the vertical contact 232 may include a conductive material, e.g., W, Ni,Ta, Co, aluminum (Al), copper (Cu), tungsten silicide, nickel silicide,tantalum silicide, cobalt silicide, and/or polysilicon doped with animpurity. The horizontal cross section of the vertical contact 232 maybe in a shape of a circle, an ellipse, a rectangle, or a square, but isnot limited thereto.

A vertical contact spacer 240 including an insulating material may beformed on the sidewall of the vertical contact 232, thereby preventingelectrical connection between the vertical contact 232 and each of thestring selection line 198, the word lines 194 and 196, the groundselection line 192, and the first semiconductor layer 170.

The dummy bit line contact 242 may be formed on the vertical contact232. The dummy bit line contact 242 may be formed at a same level as thebit line contacts 214.

The dummy bit line 234 may be formed on the dummy bit line contact 242and the fourth interlayer insulating layer 212. The dummy bit line 234may be formed to extend in the y direction at a predetermined distancefrom a bit line 216. An upper surface of the dummy bit line 234 may beformed at a same level as upper surfaces of the bit lines 216. Under thedummy bit line 234, the channel layers 200 may not be arranged. Thedummy bit line 234 may be formed in a portion of the memory cell arrayregion I in which the first peripheral circuit region II is formed, sothe dummy bit line 234 provides an electrical connection functionbetween the peripheral circuit gate structure 120 and the upperinterconnection layer 236.

The upper interconnection layer 236 may be formed on the fifthinterlayer insulating layer 218, and may be connected to the dummy bitline 234 through the third interconnection contact 238. In exemplaryembodiments, the upper interconnection layer 236 may include aconductive material having a low sheet resistance. Also, the upperinterconnection layer 236 may have a lower sheet resistance than thefirst and second lower interconnection layers 154 and 158. The upperinterconnection layer 236 may include a metal, e.g., Al, Cu, silver(Ag), and/or gold (Au). The sheet resistance of the upperinterconnection layer 236 may be, e.g., about 1.0 μΩcm to about 5.0μΩcm.

When the upper interconnection layer 236 includes a material having alow sheet resistance, it is possible to reduce a resistance between theperipheral circuit gate structure 120 in the first peripheral circuitregion II and the memory cells in the memory cell array region I,thereby preventing, e.g., a response speed delay, from occurring duringintegration of the memory cells. Also, since the upper interconnectionlayer 236 is electrically connected to the peripheral circuit gatestructure 120 through the vertical contact 232 penetrating the memorycell array region I, a distance between the upper interconnection layer236 and the peripheral circuit gate structure 120 may be minimized.Therefore, it is possible to reduce interconnection resistance betweenthe peripheral circuit gate structure 120 and the memory cells, therebypreventing a reduction in cell current so that electricalcharacteristics of the semiconductor device 1000 may be improved. Also,since the memory cell array region I and the first peripheral circuitregion II are arranged to overlap in a vertical direction in thesubstrate 110, the area of the cell array region I formed in thesubstrate 110 may be efficiently increased, and the degree ofintegration of the semiconductor device 1000 may be improved.

In addition, since interconnection lines connected from the commonsource region 172 and the p+ well 174 through the first and secondburied contacts 182 and 184 are disposed under the memory cell arrayregion I, the interconnection lines may not be formed on, e.g., theupper portion of, the memory cell array region I, and it is possible toensure the area in which the upper interconnection layer 236 may beformed. Consequently, electrical characteristics of the semiconductordevice 1000 may be improved.

In the second peripheral circuit region III of the substrate 110, theperipheral circuit gate structure 120 may be formed. The lowerinterconnection structure 150 penetrating the first etch stop layer 140and the first to third interlayer insulating layers 142, 144, and 146may be formed on the peripheral circuit gate structure 120. A fourthinterconnection contact 243 may penetrate the fourth interlayerinsulating layer 212 to be connected to the lower interconnectionstructure 150. On the fourth interconnection contact 243 and the fourthinterlayer insulating layer 212, a peripheral circuit interconnection244 may be formed. The peripheral circuit gate structure 120 formed inthe second peripheral circuit region III may provide an electricalsignal to the memory cells through the fourth interconnection contact243 and the peripheral circuit interconnection 244 formed outside thememory cell array region I. In the peripheral circuit gate structure 120formed in the second peripheral circuit region III shown in FIG. 1C, achannel region between the source/drain regions 128 is shown to beformed in the second direction for convenience. Unlike in FIG. 1C,however, the channel region may be formed in the first direction.

Referring to FIG. 1A, in the fourth interlayer insulating layer 212 ofthe bonding pad region IV, ground selection line contacts GSLC, firstand second word line contacts WLC1 and WLC2, and string selection linecontacts SSLC may be disposed. The ground selection line contacts GSLC,the first and second word line contacts WLC1 and WLC2, and the stringselection line contacts SSLC may penetrate the second etch stop layer210 to be connected to the ground selection line 192, the first andsecond word lines 194 and 196, and the string selection line 198,respectively. For example, as illustrated in FIG. 1B, the second wordline contact WLC2 may penetrate through the fourth interlayer insulatinglayer 212 to contact the second word line 196. Upper surfaces of theground selection line contacts GSLC, the first and second word linecontacts WLC1 and WLC2, and the string selection line contacts SSLC maybe formed at a same level, e.g., at a same level as an upper surface ofthe fourth interlayer insulating layer 212.

Ground selection line pads GSLP, word line pads WLP1 and WLP2, andstring selection line pads SSLP that are electrically in contact withthe ground selection line contacts GSLC, the first and second word linecontacts WLC1 and WLC2, and the string selection line contacts SSLC,respectively, may be formed on the fourth interlayer insulating layer212. Although not shown in the drawings, the ground selection line padsGSLP, the word line pads WLP1 and WLP2, and the string selection linepads SSLP may be electrically connected to a peripheral circuit throughan upper interconnection (not shown).

FIG. 2A illustrates a layout diagram of a semiconductor device 1000 aaccording to exemplary embodiments, and FIG. 2B illustrates across-sectional view taken along line 2B-2B′ of FIG. 2A. Thesemiconductor device 1000 a in accordance with FIGS. 2A and 2B issimilar to the semiconductor device 1000 described with reference toFIGS. 1A to 1C, except for a shape of a first buried contact 182 a.Thus, the following description will focus on differences between FIGS.1A-1C and FIGS. 2A-2B. In FIGS. 2A and 2B, same reference numerals as inFIGS. 1A to 1C are used to denote the same components.

Referring to FIGS. 2A and 2B, the first buried contact 182 a may extendin a first direction, i.e., in the x direction in FIGS. 2A-2B, under thecommon source region 172 (FIG. 2B). The first buried contact 182 a maybe between the common source region 172 and the dummy interconnectionstructure 160 along the z direction of FIG. 2B.

The common source region 172 on the first buried contact 182 a may beformed under a common source line 222 in the memory cell array region I.Here, the first buried contact 182 a may be formed in the shape of anextended line in a portion of a region under the common source region172 that does not overlap the first peripheral circuit region II. Forexample, as illustrated in FIG. 2B, the buried contact 182 a may extendcontinuously in the x-axis in the memory cell array region I and outsidethe first peripheral circuit region II to overlap a portion of thecommon source region 172, e.g., the buried contact 182 a and the firstperipheral circuit region II may have a non-overlapping relationship.Also, a second lower interconnection layer 168 a may be formed to extendin the first direction, so that n upper surface of the second lowerinterconnection layer 168 a may contact the first buried contact 182 a.A plurality of dummy gate structures 120 may be electrically connectedto a lower portion of the first buried contact 182 a.

FIG. 3A illustrates a layout diagram of a semiconductor device 1000 baccording to exemplary embodiments, and FIG. 3B illustrates across-sectional view taken along line 3B-3B′ of FIG. 3A. Thesemiconductor device 1000 b is similar to the semiconductor device 1000described with reference to FIGS. 1A to 1C, except that thesemiconductor device 1000 b is a non-volatile flat-panel memory device.Thus, the following description will focus on differences between FIGS.1A-1C and FIGS. 3A-3B. In FIGS. 3A and 3B, same reference numerals as inFIGS. 1A to 1C are used to denote the same components.

Referring to FIGS. 3A and 3B, the substrate 110 may include a memorycell array region V, a first peripheral circuit region VI, and a secondperipheral circuit region VII. In the memory cell array region V,non-volatile flat-panel memory cells may be disposed.

A plurality of device isolation trenches (not shown) extending in asecond direction may be formed on a first semiconductor layer 320 withintervals therebetween in a first direction, so that an active regionmay be defined in the first semiconductor layer 320. A common sourceregion 332 extending in the second direction, i.e., along the y-axis,may be formed in the first semiconductor layer 320, and p+ wells 334 maybe formed at intervals outside the first semiconductor layer 320.

On the first semiconductor layer 320, a plurality of tunnel insulatingfilm patterns 342 may be arranged in the first and second directions. Onthe plurality of tunnel insulating film patterns 342, a plurality ofcharge storage film patterns 344 may be formed. Accordingly, theplurality of charge storage film patterns 344 may also be disposed atintervals in the first and second directions. A plurality of blockinginsulating films 346 extending in the first direction may be formed atintervals in the second direction on the plurality of tunnel insulatingfilm patterns 342.

A plurality of gate electrodes 348 may be formed on the plurality oftunnel insulating film patterns 342. The plurality of gate electrodes348 may extend in the first direction and may be spaced apart in thesecond direction. The plurality of gate electrodes 348 sequentiallyarranged in the second direction may include a ground selection lineGSL, first to fourth word lines WL1, WL2, WL3, and WL4, and a stringselection line SSL.

On the first semiconductor layer 320, a first insulating layer 350covering the plurality of gate electrodes 348 may be formed. Meanwhile,although not shown in the drawings, air-gaps may be formed in the firstinsulating layer 350 between adjacent gate electrodes 348.

A peripheral circuit interconnection structure 230 a may include avertical contact 354, a dummy bit line 234, an upper interconnectionlayer 236, a third interconnection contact 238, and a dummy bit linecontact 242. The vertical contact 354 may penetrate the first insulatinglayer 350, the first semiconductor layer 320, a barrier metal layer 178,and a third interlayer insulating layer 146 between the first and secondword lines WL1 and WL2 to be connected to a lower interconnectionstructure 150.

A second insulating layer 360 may be formed on the first insulatinglayer 350 and the vertical contact 354, and a dummy bit line contact 242connected to the vertical contact 354 may be formed in the secondinsulating layer 360. The dummy bit line 234 and the bit lines 216 maybe formed on the second insulating layer 360, and a third insulatinglayer 362 covering the dummy bit line 234 and the bit lines 216 may beformed on the second insulating layer 360. The upper interconnectionlayer 236 formed on the third insulating layer 362 may be connected tothe dummy bit line 234 through the third interconnection contact 238.

FIGS. 4A to 13 illustrate cross-sectional views of stages in a method offabricating the semiconductor device 1000 according to exemplaryembodiments. The fabrication method may be a method of fabricating thesemiconductor device 1000 described with reference to FIGS. 1A to 1C. Inparticular, FIGS. 4A, 5A, 6A, 7, 8, 9A, 10, 11A, 12A, and 13 illustratecross-sectional views taken along line 1B-1B′ of FIG. 1A, and FIGS. 4B,5B, 6B, 9B, 11B, and 12B are cross-sectional view taken along line1C-1C′ of FIG. 1A. In the peripheral circuit gate structure 120 shown inFIGS. 4B, 5B, 6B, 9B, 11B, and 12B, the channel region between thesource/drain regions 128 is formed in the second direction (a ydirection in FIG. 4B) for convenience, but the channel region may beformed in the first direction.

Referring to FIGS. 4A and 4B, after a buffer oxide layer (not shown) anda silicon nitride layer (not shown) are formed on the substrate 110,buffer oxide layer patterns (not shown), silicon nitride layer patterns(not shown), and a trench (not shown) may be formed by consecutivelypatterning the silicon nitride layer, the buffer oxide layer, and thesubstrate 110. By filling the trench with an insulating material, e.g.,silicon oxide, the device isolation layer 112 may be formed. After thedevice isolation layer 112 is planarized until upper surfaces of thesilicon nitride layer patterns are exposed, the silicon nitride layerpatterns and the buffer oxide layer patterns may be removed.

A sacrificial oxide layer (not shown) is formed on the substrate andthen patterned by using photoresist, and a first ion implantationprocess is performed so that the peripheral circuit p-well 114 p may beformed in the substrate 110. Also, patterning is performed by usingphotoresist, and a second ion implantation process is performed so thatthe peripheral circuit n-well 114 n may be formed in the substrate 110.The peripheral circuit p-well 114 p may be an NMOS transistor-formingregion, and the peripheral circuit n-well 114 n may be a PMOStransistor-forming region.

The peripheral circuit gate insulating layer 122 may be formed on thesubstrate 110. The peripheral circuit gate insulating layer 122 may beformed to include a first gate insulating layer (not shown) and a secondgate insulating layer (not shown) that are stacked in sequence. Thefirst and second gate insulating layers may be a low-voltage gateinsulating layer and a high-voltage gate insulating layer, respectively.

A peripheral circuit gate conductive layer (not shown) may be formed onthe peripheral circuit gate insulating layer 122, and the peripheralcircuit gate electrode 124 may be formed by patterning the peripheralcircuit gate conductive layer. The peripheral circuit gate electrode 124may be formed of doped polysilicon. Also, the peripheral circuit gateelectrode 124 may be formed to have a multilayer structure including apolysilicon layer and a metal layer or a multilayer structure includinga polysilicon layer and a metal silicide layer.

The peripheral circuit spacers 126 may be formed on the sidewalls of theperipheral circuit gate electrode 124. For example, by forming a siliconnitride layer on the peripheral circuit gate electrode 124 and thenanisotropically etching the silicon nitride layer, the peripheralcircuit spacer 126 may be formed. The source/drain regions 128 may beformed in portions of the substrate 110 on both sides of the peripheralcircuit gate electrode 124. In the case of an NMOS transistor, thesource/drain regions 128 may be doped with an n-type impurity, and inthe case of a PMOS transistor, the source/drain regions 128 may be dopedwith a p-type impurity. The source/drain regions 128 may have a lightlydoped drain (LDD) structure.

Accordingly, the peripheral circuit gate structure 120 including theperipheral circuit gate insulating layer 122, the peripheral circuitgate electrode 124, the peripheral circuit spacer 126, and thesource/drain regions 128 may be formed. The first etch stop layer 140may be formed on the peripheral circuit gate structure 120. The firstetch stop layer 140 may be formed of an insulating material, e.g.,silicon nitride, silicon oxynitride, or silicon oxide.

Meanwhile, the dummy gate structure 130 may be formed on the deviceisolation layer 112, i.e., the field region. As an example, the dummygate structure 130 may be formed on a portion of the device isolationlayer 112 corresponding to an edge portion of the substrate 110. Asanother example, the dummy gate structure 130 may be formed on a portionof the device isolation layer 112 above which a memory cell array willbe disposed in a follow-up process.

Referring to FIGS. 5A and 5B, the first interlayer insulating layer 142may be formed on the first etch stop layer 140. Subsequently, a firstinterconnection contact hole 250 penetrating the first interlayerinsulating layer 142 and the first etch stop layer 140 may be formed.The first interconnection contact hole 250 may be formed to expose theupper surface of the peripheral circuit gate electrode 124 or thesource/drain regions 128. Subsequently, the first interconnectioncontact hole 250 is filled with a conductive material (not shown), andthen the conductive material is planarized until the upper surface ofthe first interlayer insulating layer 142 is exposed so that the firstinterconnection contact 152 may be formed in the first interconnectioncontact hole 250.

A conductive layer (not shown) is formed on the first interlayerinsulating layer 142 and then patterned so that the first lowerinterconnection layer 154 electrically connected to the firstinterconnection contact 152 may be formed. The second interlayerinsulating layer 144 may be formed on the first lower interconnectionlayer 154 and the first interlayer insulating layer 142. A secondinterconnection contact hole 252 penetrating the second interlayerinsulating layer 144 and exposing the upper surface of the first lowerinterconnection layer 154 may be formed. Subsequently, the secondinterconnection contact hole 252 is filled with a conductive material(not shown), and then the conductive material is planarized until theupper surface of the second interlayer insulating layer 144 is exposedso that the second interconnection contact 156 may be formed in thesecond interconnection contact hole 252.

A conductive layer (not shown) is formed on the second interlayerinsulating layer 144 and then patterned so that the second lowerinterconnection layer 158 electrically connected to the secondinterconnection contact 156 may be formed. The third interlayerinsulating layer 146 may be formed on the second lower interconnectionlayer 158 and the second interlayer insulating layer 144.

In exemplary embodiments, the first to third interlayer insulatinglayers 142, 144, and 146 may be formed of insulating materials, e.g.,silicon nitride, silicon oxynitride, and silicon oxide. The lowerinterconnection layers 154 and 158 and the interconnection contacts 152and 156 may be formed of metals, e.g., W, Mo, Ti, Co, Ta, and Ni, andconductive materials, e.g., tungsten silicide, titanium silicide, cobaltsilicide, tantalum silicide, and nickel silicide. By performing theabove-described process, the lower interconnection structure 150 may beformed.

Meanwhile, by performing processes similar to the process of forming thelower interconnection layers 154 and 158 and the interconnectioncontacts 152 and 156, the first and second dummy interconnectioncontacts 162 and 166 and the first and second dummy interconnectionlayers 164 and 168 may be formed on the dummy gate structure 130.Accordingly, the dummy interconnection structure 160 may be formed.

First and second buried contact holes (not shown) exposing the uppersurface of the second dummy interconnection layer 168 are formed in thethird interlayer insulating layer 146 and filled with a conductivematerial so that the first and second buried contacts 182 and 184contacting the second dummy interconnection layer 168 may be formed.

Referring to FIGS. 6A and 6B, the barrier metal layer 178 is formed onthe third interlayer insulating layer 146 and the first and secondburied contacts 182 and 184. For example, the barrier metal layer 178may be formed of, e.g., Ti, Ta, titanium nitride, and tantalum nitride.

The first semiconductor layer 170 may be formed on the barrier metallayer 178. The first semiconductor layer 170 may be formed ofpolysilicon doped with a first impurity by using a chemical vapourdeposition (CVD) process, an atomic layer deposition (ALD) process, aphysical vapour deposition (PVD) process, or so on. The firstsemiconductor layer 170 may be formed to have a thickness of about 20 nmto about 500 nm, but the thickness of the first semiconductor layer 170is not limited thereto. In the process of forming the firstsemiconductor layer 170, in situ-doping with the first impurity may beperformed, or after the first semiconductor layer 170 is formed, dopingwith the first impurity may be performed by an ion implantation process.The first impurity may be a p-type impurity.

The first semiconductor layer 170 is doped with a second impurity byusing a first ion implantation mask (not shown) so that the commonsource region 172 may be formed in the first semiconductor layer 170.The second impurity may be an n-type impurity. The common source region172 may be formed to extend in the first direction, and the first buriedcontact 182 may be placed under the common source region 172.Subsequently, the first ion implantation mask may be removed.

An edge portion of the first semiconductor layer 170 is doped with athird impurity by using a second ion implantation mask (not shown) sothat the p+ well 174 may be formed in the first semiconductor layer 170.The third impurity may be a p-type impurity. A plurality of p+ wells 174may be spaced apart in the second direction, and the second buriedcontact 184 may be placed under at least one of the plurality of p+wells 174. Subsequently, the second ion implantation mask may beremoved.

Meanwhile, in the process of implanting the second and third impurities,the common source region 172 and the p+ well 174 may be formed to haveprofiles of the concentrations of the second and third impurities thatincrease in a vertically downward direction from the upper surface ofthe first semiconductor layer 170. Accordingly, portions of the commonsource region 172 and the p+ well 174 that come in contact with thebarrier metal layer 178 may have the highest second and third impurityconcentrations, and the common source region 172 and the p+ well 174 mayform ohmic contacts with the barrier metal layer 178 formed thereunder.Therefore, it is possible to reduce the electrical resistance betweenthe common source region 172 and the first buried contact 182 and theelectrical resistance between the p+ well 174 and the second buriedcontact 184.

Referring to FIG. 7, a preliminary gate stack structure 190 may beformed by alternately stacking the first to fifth insulating layers 191,193, 195, 197, and 199 and first to fourth preliminary gate layers 192a, 194 a, 196 a, and 198 a on the first semiconductor layer 170. Theinsulating layers 191, 193, 195, 197, and 199 may be formed of, e.g.,silicon oxide, silicon nitride, and silicon oxynitride to have apredetermined height. Also, the preliminary gate layers 192 a, 194 a,196 a, and 198 a may be formed of, e.g., silicon oxide, silicon carbide,and polysilicon to have a predetermined height. The preliminary gatelayers 192 a, 194 a, 196 a, and 198 a may be preliminary layers andsacrificial layers for forming a ground selection line (192 in FIG.11A), a plurality of word lines (194 and 196 in FIG. 11A), and a stringselection line (198 in FIG. 11A), respectively. The number of thepreliminary gate layers 192 a, 194 a, 196 a, and 198 a may beappropriately selected for the number of the ground selection line, theword lines, and the string selection line.

Referring to FIG. 8, a channel hole 260 may be formed to penetrate thepreliminary gate stack structure 190 and extend in the third direction,which is perpendicular to the main surface of the substrate 110. Aplurality of channel holes 260 may be formed at intervals in the firstand second directions, and the upper surface of the semiconductor layer170 under the channel holes 260 may be exposed.

FIG. 8 illustrates that portions of the first semiconductor layer 170exposed under the channel holes 260 have a planar shape. Unlike this,however, the portions of the first semiconductor layer 170 under thechannel holes 260 may be over-etched, and recesses (not shown) may beformed at the upper-surface portions of the first semiconductor layer170.

On the sidewalls of the channel holes 260, the upper surface of thefirst semiconductor layer 170 exposed under the channel holes 260, andthe preliminary gate stack structure 190, a preliminary gate insulatinglayer (not shown) may be formed. Subsequently, by anisotropicallyetching the preliminary gate insulating layer, portions of thepreliminary gate insulating layer formed on the preliminary gate stackstructure 190 and on the upper surface of the first semiconductor layer170 under the channel holes 260 may be removed so that the gateinsulating layers 204 may be formed on the sidewalls of the channelholes 260. Accordingly, the upper surface of the first semiconductorlayer 170 may be exposed again under the channel holes 260. Each gateinsulating layer 204 may be formed to have a structure in which theblocking insulating film 204 c, the charge storage film 204 b, and thetunnel insulating film 204 a are stacked in sequence. Optionally, abarrier metal layer (not shown) may be further formed on the sidewall ofeach channel hole 260 before the blocking insulating film 204 c isformed.

Each gate insulating layer 204 may be, e.g., conformally, formed on thesidewall of each channel hole 260 to have a predetermined thickness sothat the channel hole 260 may not be fully filled with the gateinsulating layer 204.

Subsequently, a conductive layer (not shown) and an insulating layer(not shown) are sequentially formed on the inner wall of each channelhole 260 and the preliminary gate stack structure 190, and then upperportions of the conductive layer and the insulating layer are planarizeduntil the upper surface of the preliminary gate stack structure 190 isexposed so that a channel layer 200 and a buried insulating layer 202may be formed on the inner wall of the channel hole 260. The bottomsurfaces of the channel layers 200 may come in contact with the uppersurface of the first semiconductor layer 170 exposed under the channelholes 260, and the outer surfaces of the channel layers 200 may come incontact with the gate insulating layers 204. The channel layers 200 maybe formed of polysilicon doped with an impurity by a CVD process, alow-pressure chemical vapour deposition (LPCVD) process, or an ALDprocess, or may be formed of undoped polysilicon. Each buried insulatinglayer 202 may be formed of an insulating material, e.g., silicon oxide,silicon nitride, or silicon oxynitride, by a CVD process, an LPCVDprocess, or an ALD process.

Subsequently, the second etch stop layer 210 covering the upper surfacesof the channel layers 200, the buried insulating layers 202, and thegate insulating layers 204 may be formed on the preliminary gate stackstructure 190. The second etch stop layer 210 may be formed of, e.g.,silicon nitride, silicon oxide, silicon oxynitride, or so on.

After drain holes 262 exposing the upper surfaces of the channel layers200 and the buried insulating layers 202 are formed in the second etchstop layer 210, a conductive layer (not shown) filling the drain holes262 may be formed and planarized, so that the drain regions 206 may beformed. The upper surfaces of the drain regions 206 may be formed at thesame level as the upper surface of the second etch stop layer 210.

Referring to FIGS. 9A and 9B, a first opening 264 and a preliminaryvertical contact hole 266 may be formed in the second etch stop layer210 and the preliminary gate stack structure 190. The first opening 264may extend in the y direction and expose the upper surface of the commonsource region 172, and the vertical contact hole 266 may expose theupper surface of the first semiconductor layer 170. The vertical contacthole 266 may be formed at a predetermined distance from the channellayer 200 in the first direction.

Referring to FIG. 10, by sequentially removing a portion of the firstsemiconductor layer 170, a portion of the barrier metal layer 178, and aportion of the third interlayer insulating layer 146 exposed under thepreliminary vertical contact hole (266 in FIG. 9A), a vertical contacthole 266 a that is the preliminary vertical contact hole 266 expanded inthe downward direction may be formed. Under the vertical contact hole266 a, the upper surface of the second lower interconnection layer 158may be exposed.

According to exemplary embodiments, isotropic etching and/or anisotropicetching may be used in the process of forming the vertical contact hole266 a. When a contact hole having a large aspect ratio is formed at onceat a single etching process, a width of a bottom portion of the contacthole may decrease due to a slope of the sidewall of the contact hole.When the expanded vertical contact hole 266 a is formed by a two-stepetching process, the vertical contact hole 266 a may be expanded in thelateral direction by using isotropic etching characteristics in theprocess of removing the first semiconductor layer 170, so the width of abottom portion of the vertical contact hole 266 a may increase even ifthe aspect ratio of the vertical contact hole 266 a is large. In thiscase, a step difference S1 may be formed on the sidewall of the verticalcontact hole 266 a from the upper surface of the first semiconductorlayer 170.

Meanwhile, unlike in FIGS. 9A to 10, the vertical contact hole 266 a maybe formed after the first opening 264 is formed. In this case, after thefirst opening 264 is formed, the vertical contact hole 266 a may beformed by sequentially etching the second etch stop layer 210, thepreliminary gate stack structure 190, the first semiconductor layer 170,the barrier metal layer 178, and the third interlayer insulating layer146.

Referring to FIGS. 11A and 11B, by performing a silicidation process onthe preliminary gate stack structure 190, the first to fourthpreliminary gate layers 192 a, 194 a, 196 a, and 198 a may be convertedinto the ground selection line 192, the first word line 194, the secondword line 196, and the string selection line 198, respectively. At thistime, the ground selection line 192, the first and second word lines 194and 196, and the string selection line 198 may include metal silicidematerials, e.g., tungsten silicide, tantalum silicide, cobalt silicide,and nickel silicide.

Alternatively, by selectively removing only the gate layers 192 a, 194a, 196 a, and 198 a exposed through the first opening 264 and fillingthe spaces between the insulating layers 191, 193, 195, 197, and 199with a conductive material, the ground selection line 192, the wordlines 194 and 196, and the string selection line 198 may be formed. Atthis time, the ground selection line 192, the word lines 194 and 196,and the string selection line 198 may be formed of metal materials,e.g., W. Ta, Co, and Ni. Optionally, before the process of filling thespaces with the conductive material, a barrier metal layer (not shown)may be further formed in the spaces between the insulating layers 191,193, 195, 197, and 199.

Referring to FIGS. 12A and 12B, an insulating layer (not shown) isformed on the inner walls of the first opening 264 and the verticalcontact hole 266 a and then anisotropically etched so that the commonsource line spacers 224 and the vertical contact spacer 240 may beformed on the sidewalls of the first opening 264 and the sidewall of thevertical contact hole 26 a, respectively. The common source line spacers224 and the vertical contact spacer 240 may be formed of an insulatingmaterial, e.g., silicon oxide, silicon nitride, or silicon oxynitride.

Subsequently, a conductive layer (not shown) filling the first opening264 and the vertical contact hole 266 a is formed. An upper portion ofthe conductive layer is planarized until the upper surface of the secondetch stop layer 210 is exposed, so that the common source line 222 andthe vertical contact 232 may be formed on the inner walls of the firstopening 264 and the vertical contact hole 266 a, respectively.

Referring to FIG. 13, the ground selection line 192, the word lines 194and 196, and the string selection line 198 may be patterned by aplurality of patterning processes in which a mask (not shown) is used.At this time, the sidewalls of the fifth and fourth insulating layers199 and 197 may be patterned to be aligned with the sidewall of thestring selection line 198, and the sidewalls of the third and secondinsulating layers 195 and 193 may be patterned to be aligned with thesidewalls of the second and first word lines 196 and 194, respectively.Also, the sidewall of the first insulating layer 191 may be patterned tobe aligned with the sidewall of the ground selection line 192.

Subsequently, the fourth interlayer insulating layer 212 may be formedto cover the second etch stop layer 210 and the sidewalls of thepatterned ground selection line 192, the patterned word lines 194 and196, and the patterned string selection line 198. A dummy bit linecontact hole (not shown) and bit line contact holes (not shown) exposingthe upper surfaces of the vertical contact 232 and the drain regions 206are formed in the fourth interlayer insulating layer 212 and filled witha conductive material, and an upper portion of the conductive materialis planarized so that the dummy bit line contact 242 and the bit linecontacts 214 may be formed.

In the planarized fourth interlayer insulating layer 212 of the bondingpad region IV, string selection line contact holes (not shown) exposingthe string selection line 198, word line contact holes (not shown)exposing the word lines 194 and 196, and a ground selection line contacthole (not shown) exposing the ground selection line 192 may be formed.Also, in the second peripheral circuit region III, a peripheral circuitcontact hole (not shown) exposing the second lower interconnection layer158 may be formed. After the string selection line contact holes, theword line contact holes, the ground selection line contact hole, and theperipheral circuit contact hole are filled with a conductive material,an upper portion of the conductive material is planarized until theupper portion of the fourth interlayer insulating layer 212 is exposedso that the string selection line contacts SSLC, the word line contactsWLC1 and WLC2, the ground selection line contacts GSLC, and the dummybit line contact 242 and the bit line contacts 214 may be formed.

A conductive layer (not shown) is formed on the fourth interlayerinsulating layer 212 and then patterned so that the bit lines 216, thedummy bit line 234, the string selection line pads SSLP, the word linepads WLP1 and WLP2, the ground selection line pads GSLP, and theperipheral circuit interconnection 244 may be formed to be connected tothe bit line contacts 214, the dummy bit line contact 242, the stringselection line contacts SSLC, the word line contacts WLC1 and WLC2, theground selection line contacts GSLC, and the peripheral circuit contact243 illustrated in FIG. 1C, respectively.

Referring back to FIGS. 1A to 1C, the fifth interlayer insulating layer218 covering the bit lines 216, the dummy bit line 234, the stringselection line pads SSLP, the word line pads WLP1 and WLP2, the groundselection line pads GSLP, and the peripheral circuit interconnection 244may be formed on the fourth interlayer insulating layer 212. A thirdinterconnection contact hole (not shown) exposing the supper surface ofthe dummy bit line 234 is formed in the fifth interlayer insulatinglayer 218 and then filled with a conductive material so that the thirdinterconnection contact 238 may be formed.

The upper interconnection layer 236 electrically connected to the thirdinterconnection contact 238 may be formed on the fifth interlayerinsulating layer 218. The upper interconnection layer 236 may be formedof a material having a low sheet resistance. For example, the upperinterconnection layer 236 may be formed of a material having a lowersheet resistance than that of the lower interconnection layers 154 and158. The upper interconnection layer 236 may be formed of a metal, forexample, Al, Cu, or Ni.

In other embodiments, after a second opening (not shown) is formed byforming and patterning a sixth interlayer insulating layer (not shown),a barrier metal layer (not shown) may be formed to have a predeterminedthickness on the inner wall of the second opening. Subsequently, aconductive layer (not shown) filling the second opening is formed on thebarrier metal layer and planarized until the upper surface of the sixthinterlayer insulating layer is exposed so that the upper interconnectionlayer 236 may be formed. In this case, the side surfaces and the bottomsurface of the upper interconnection layer 236 come in contact with thebarrier metal layer, thereby preventing penetration of impurity atomsfrom the upper interconnection layer 236 into the fifth interlayerinsulating layer 218 or the sixth interlayer insulating layer.

The upper interconnection layer 236 may electrically connect theperipheral circuit gate structure 120 formed in the first peripheralcircuit region II with the memory cells in the memory cell array regionI by using a material having a low sheet resistance. In general, whenthe upper interconnection layer 236 includes a material having a lowsheet resistance, the upper interconnection layer 236 may have a lowmelting point and may be degraded or damaged in processes for forming amemory cell array performed at high temperature. However, according toembodiments, since the upper interconnection layer 236 is formed after amemory cell array is formed, it is possible to prevent the upperinterconnection layer 236 from being exposed to high temperature andefficiently reduce the resistance of the peripheral circuitinterconnection structure 230 including the upper interconnection layer236.

By the above-described processes, the semiconductor device 1000 may beformed.

By way of summary and review, according to example embodiments,peripheral circuits are disposed under a memory cell array, a metalinterconnection having low resistance is formed on the memory cell, andthe peripheral circuits and the metal interconnection are connected toeach other through a vertical contact. Thus, the degree of integrationof a memory device may increase.

Further, a dummy gate structure is formed on a portion of a substrate inwhich the memory cell array is not formed, and connected to a commonsource region and a p+ well. By using the dummy gate structure as aninterconnection to the common source region and the p+ well, it ispossible to reduce malfunctions of the memory device.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A semiconductor device comprising: a firstdriving circuit region and a second driving circuit region on a firstsubstrate to generate driving signals; a second substrate on the firstand second driving circuit regions; a memory cell array region on thesecond substrate, the memory cell array region entirely overlapping thefirst driving circuit region and not or partially overlapping the seconddriving circuit region; a first upper interconnection layer on thememory cell array region; and a first vertical contact through thememory cell array region and the second substrate, the first verticalcontact connecting the first upper interconnection layer to the firstdriving circuit region.
 2. The semiconductor device of claim 1, furthercomprising a second vertical contact through an interlayer insulatinglayer, wherein the second vertical contact electrically connects asecond upper interconnection layer on the memory cell array region tothe second driving circuit region.
 3. The semiconductor device of claim2, wherein the second vertical contact includes an interconnectioncontact that is not disposed through the memory cell array region andthe second substrate and separated from the memory cell array region andthe second substrate.
 4. The semiconductor device of claim 1, whereinthe second driving circuit region includes a row decoder circuit.
 5. Thesemiconductor device of claim 1, further comprising a bonding pad regionand the second substrate extends to the bonding pad region.
 6. Thesemiconductor device of claim 5, wherein the bonding pad region does notoverlap the second driving circuit region.
 7. The semiconductor deviceof claim 1, wherein the second substrate includes a common source line.8. The semiconductor device of claim 7, wherein the second substrateincludes a semiconductor layer.
 9. The semiconductor device of claim 7,wherein the second substrate includes a polysilicon layer.
 10. Thesemiconductor device of claim 1, wherein the memory cell array regionconstitutes a vertical NAND memory.
 11. The semiconductor device ofclaim 1, further comprising a memory cell array on the memory cell arrayregion, wherein the memory cell array includes: a channel layerextending in a vertical direction on the second substrate; and at leastone ground selection line, at least one word line, and at least onestring selection line spaced apart in the vertical direction along asidewall of the channel layer.
 12. The semiconductor device of claim 11,wherein the channel layer directly contacts the second substrate. 13.The semiconductor device of claim 1, wherein the first driving circuitregion includes at least one driving circuit.
 14. The semiconductordevice of claim 13, wherein the at least one driving circuit is toprocess input or output data.
 15. The semiconductor device of claim 14,wherein the at least one driving circuit includes a page buffer, a latchcircuit, a column decoder, a sense amplifier, or a data in/out circuit.16. The semiconductor device of claim 1, wherein the first upperinterconnection layer includes at least one of copper, aluminum, silver,or gold.
 17. The semiconductor device of claim 1, further comprising abarrier metal layer between the first driving circuit region and thesecond substrate.